Ballistic transport of composite fermions in narrow cross junctionsHERFORT, J; TAKAGAKI, Y; HEY, R et al.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 49, pp 9563-9570, issn 0953-8984Article

Substitution of bismuth in hot wall epitaxy of Bi₂Se₃ on transition metalsTAKAGAKI, Y; JAHN, U; RAMSTEINER, M et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085031.1-085031.5Article

New route to reduce ionized impurity scattering in modulation-doped GaAs quantum wellsHEY, R; FRIEDLAND, K.-J; KOSTIAL, H et al.Journal of crystal growth. 1997, Vol 175-76, pp 1126-1130, issn 0022-0248, 2Conference Paper

Hopping conductivity in gated δ-doped GaAs: universality of prefactorSHLIMAK, I; FRIEDLAND, K.-J; BARANOVSKII, S. D et al.Solid state communications. 1999, Vol 112, Num 1, pp 21-24, issn 0038-1098Article

The stark effect on a bound hole in δ-acceptor doped GaAs/Al_xGa_1-xAs heterostructuresLUSAKOWSKI, J; FRIEDLAND, K. J; PLOOG, K et al.Solid state communications. 2007, Vol 142, Num 5, pp 299-301, issn 0038-1098, 3 p.Article

Negative magnetoresistance of neutron-transmutation-doped gallium arsenide at variable-range hoppingRENTZSCH, R; FRIEDLAND, K. J; IONOV, A. N et al.Physica status solidi. B. Basic research. 1988, Vol 146, Num 1, pp 199-206, issn 0370-1972Article

Epitaxial orientation and planar Hall effect for MnAs films grown on GaAs(001)FRIEDLAND, K.-J; KÄSTNER, M; DÄWERITZ, L et al.Journal of superconductivity. 2003, Vol 16, Num 2, pp 261-265, issn 0896-1107, 5 p.Article

Electron trajectories on a cylindrical surface studied by ballistic transport and quantum Hall effect measurementsFRIEDLAND, K.-J; HEY, R; KOSTIAL, H et al.Physica. E, low-dimentional systems and nanostructures. 2008, Vol 40, Num 5, pp 1087-1088, issn 1386-9477, 2 p.Conference Paper

Low-temperature saturation of 2D variable-range-hopping conductivity induced by the gate covering the mesa edgeLEVIN, M; LU, Tie-Cheng; SHLIMAK, I et al.Physica status solidi. B. Basic research. 2002, Vol 230, Num 1, pp 217-220, issn 0370-1972Conference Paper

New angles of phonon refractionMSALL, M. E; DIETSCHE, W; FRIEDLAND, K.-J et al.Physica. B, Condensed matter. 2002, Vol 316-17, pp 366-368, issn 0921-4526Conference Paper

Novel functionalities by guiding electrons in highly uniform quantum wire ensembles on multiatomic step arrays of GaAs(331) substratesFRIEDLAND, K.-J; SCHÖNHERR, H.-P; NÖTZEL, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 180-183, issn 0921-5107Conference Paper

Metastability of the quantum Hall states in asymmetric two-layer systemsTAKAGAKI, Y; FRIEDLAND, K.-J; PLOOG, K. H et al.Journal of physics. Condensed matter (Print). 1998, Vol 10, Num 37, pp 8305-8311, issn 0953-8984Article

Magnetotransport in two parallel two-dimensional electron gases formed by a delta-doped layer and a heterojunction in GaAsFRIEDLAND, K.-J; PLOOG, K.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 932-935, issn 0021-4922, 1Conference Paper

Hot wall epitaxy of Sb₂Te₃ layers: coherent hetero-epitaxy on InAs(111) and Sb substitution in Cu-mediated growthTAKAGAKI, Y; JENICHEN, B; JAHN, U et al.Semiconductor science and technology. 2013, Vol 28, Num 2, issn 0268-1242, 025012.1-025012.7Article

Spatial distribution of structural disorder in Co₂FeSi films studied by anisotropic magnetoresistanceBRUSKI, P; FRIEDLAND, K.-J; FARSHCHI, R et al.Solid state communications. 2012, Vol 152, Num 13, pp 1131-1134, issn 0038-1098, 4 p.Article

Magnetic anisotropy in Heusler alloy Fe₃Si films on GaAs(1 1 3)AHERFORT, J; MUDULI, P. K; FRIEDLAND, K.-J et al.Journal of magnetism and magnetic materials. 2007, Vol 310, Num 2, pp 2228-2230, issn 0304-8853, 3 p., 3Conference Paper

Influence of the second subband on the surface acoustic wave transmission in the quantum Hall regimeTAKAGAKI, Y; WIEBICKE, E; FRIEDLAND, K.-J et al.Semiconductor science and technology. 2001, Vol 16, Num 3, pp 144-150, issn 0268-1242Article

Transport properties of composite fermions in narrow cross junctionsHERFORT, J; TAKAGAKI, Y; HEY, R et al.Surface science. 1996, Vol 361-62, Num 1-3, pp 63-66, issn 0039-6028Conference Paper

Temperature and magnetic field dependences of the conductivity in δ-doped GaAs with electron concentrations in the dilute metallic limitASCHE, M; FRIEDLAND, K.-J; KLEINERT, P et al.Semiconductor science and technology. 1992, Vol 7, Num 7, pp 923-930, issn 0268-1242Article

Order-driven contribution to the planar hall effect in Fe₃Si thin filmsBOWEN, M; FRIEDLAND, K.-J; HERFORT, J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 17, pp 172401.1-172401.4, issn 1098-0121Article

Antisymmetric contribution to the planar Hall effect of Fe₃Si films grown on GaAs(113)A substratesMUDULI, P. K; FRIEDLAND, K.-J; HERFORT, J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 10, pp 104430.1-104430.9, issn 1098-0121Article

High mobility electron heterostructure wafer fused onto LiNbO₃FRIEDLAND, K.-J; RIEDEL, A; KOSTIAL, H et al.Journal of electronic materials. 2001, Vol 30, Num 7, pp 817-820, issn 0361-5235Article

Negative bend resistance in narrow cross junctions near v = 1TAKAGAKI, Y; FRIEDLAND, K.-J; MAUDE, D. K et al.Solid state communications. 1998, Vol 106, Num 9, pp 627-630, issn 0038-1098Article

Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped GaAs/Ga_1-xAl_xAs heterojunctionsSHEN, J. X; OKA, Y; OSSAU, W et al.Solid state communications. 1998, Vol 106, Num 8, pp 495-499, issn 0038-1098Article

Decoration phenomena during planar doping of GaAs with Si and effects on magnetotransportDÄWERITZ, L; FRIEDLAND, K.-J; BEHREND, J et al.Physica status solidi. A. Applied research. 1994, Vol 146, Num 1, pp 277-288, issn 0031-8965Article